Specifications
Table Of Contents
- Contents
- Tables
- Figures
- 1 Introduction
- 2 Interface Characteristics
- 2.1 Application Interface
- 2.2 RF Antenna Interface
- 2.3 GNSS Interface
- 2.4 Sample Application
- 3 Operating Characteristics
- 3.1 Operating Modes
- 3.2 Power Up/Power Down Scenarios
- 3.3 Power Saving
- 3.4 Power Supply
- 3.5 Operating Temperatures
- 3.6 Electrostatic Discharge
- 3.7 Blocking against RF on Interface Lines
- 3.8 Reliability Characteristics
- 4 Mechanical Dimensions, Mounting and Packaging
- 5 Regulatory and Type Approval Information
- 6 Document Information
- 7 Appendix
Cinterion
®
EXS62-W/EXS82-W Hardware Interface Description
3.7 Blocking against RF on Interface Lines
102
t EXS62-W_EXS82-W_HID_v01.200ee 2022-09-02
Public/ Released
Page 101 of 144
The following table lists for each signal line at the module‘s SMT application interface the EMI
measures that may be implemented.
Table 27: EMI measures on the application interface
Signal name EMI measures Remark
A B C D E
CCIN x
CCRST x The external capacitor should be not higher
than 1nF. The value of the capacitor
depends on the external application, and
should be placed close to SIM connector/
eUICC.
CCIO x The external capacitor should be not higher
than 10pF. The value of the capacitor
depends on the external application, and
should be placed close to SIM connector/
eUICC.
CCCLK x
VUSB x x x
RXD0 xxxxx
TXD0 xxxxx
CTS0 xxxxx
RTS0 xxxxx
DTR0 xxxxx
DCD0 xxxxx
DSR0 xxxxx
RXD1 xxxxx
TXD1 xxxxx
RTS1 xxxxx
CTS1 xxxxx
RING0 xxxxx
STATUS xxxxx
FST_SHDN xxxxx
SIM_SWITCH xxxxx
GPIO6-7, 20-23, 25 xxxxx
I2CDAT
1
1. Available with embedded processing option only.
x x The rising signal edge is reduced with an
additional capacitor.
I2CCLK
1
xx
V180 x x x
BATT+
RF
(pad 53) x x Measures required if BATT+
RF
is close to
internal GSM antenna -
e.g., 39pF blocking capacitor to ground
BATT+
BB
(pad 5) x x