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June 2007 Rev 3 1/9

Table 1. Devices summary

Order code Marking Package Packaging

2N5191 2N5191 SOT-32 Tube

2N5192 2N5192 SOT-32 Tube

2N5191

2N5192

NPN power transistors

Features

■ NPN transistors

Applications

■ Linear and switching industrial equipment

Description

The devices are manufactured in Planar

technology with “Base Island” layout. The

resulting transistor shows exceptional high gain

performance coupled with very low saturation

voltage. The PNP type of 2N5192 is 2N5195.

Figure 1. Internal schematic diagram

SOT-32

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Summary of content (9 pages)

PAGE 1
2N5191 2N5192 NPN power transistors Features ■ NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. 3 1 SOT-32 Figure 1. Table 1.
PAGE 2
Electrical ratings 1 2N5191 2N5192 Electrical ratings Table 2. Absolute maximum rating Symbol Unit 2N5191 2N5192 VCBO Collector-base voltage (IE = 0) 60 80 V VCEO Collector-base voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 4 A Collector peak current 7 A Base current 1 A PTOT Total dissipation at T case = 25°C 40 W Tstg Storage temperature -65 to 150 °C 150 °C IC ICM IB TJ 2/9 Value Parameter Max.
PAGE 3
2N5191 2N5192 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol ICBO Parameter Collector cut-off current (IE = 0) Max. Unit VCB = rated VCBO 0.1 mA VCE = rated VCEO mA 2 mA Collector cut-off current (IB = 0) VCE = rated VCEO 1 mA Emitter cut-off current (IC = 0) VEB = 5V 1 mA ICEO IEBO Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) hFE Typ. 0.
PAGE 4
Electrical characteristics 2.1 4/9 2N5191 2N5192 Electrical characteristic (curves) Figure 2. DC current gain Figure 3. DC current gain Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. Base-emitter on voltage Figure 7.
PAGE 5
2N5191 2N5192 Figure 8. 2.2 Electrical characteristics Resistive load switching time Test circuit Figure 9.
PAGE 6
Package mechanical data 3 2N5191 2N5192 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
PAGE 7
2N5191 2N5192 Package mechanical data SOT-32 (TO-126) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 2.4 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 16 P 2.9 3.2 Q Q1 7.8 3.8 1 1.52 H2 2.15 I 1.
PAGE 8
Revision history 4 2N5191 2N5192 Revision history Table 4. 8/9 Revision history Date Revision Changes 01-Dec-2000 1 Initial release. 14-Jan-2004 2 Technical migration from ST-Press to EDOCS 28-Jun-2007 3 Figures 2,3,4,5,6,7, 8 and figure 9 have been added.
PAGE 9
2N5191 2N5192 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.