Specifications

SED1230
Series
EPSON 6–3
SED1230 Series
SED1230 SERIES, CHIP SPECIFICATION
SED1230D
**
1/30 duty 12 columns + 1 signal column
SED1231D
**
1/23 duty 12 columns + 1 signal column
SED1232D
**
1/16 duty 12 columns + 1 signal column
SED1233D
**
1/16 duty 16 columns
#1 Column for CG ROM pattern change
Chip size: 10.23 × 3.11 mm
Pad pitch: 110 µm (Min.)
Chip thickness: 625 (SED123
*
D
*
A
, SED123
*
D
*
B
)
525 (SED123
*
D
*
C
, SED123
*
D
*
E
)
1) A1 pad specification (SED123
*
D
*
A
)
Pad size: A 86 µm × 135 µm
B 135 µm × 86 µm
2) Au bump specification (SED123
*
D
*
B
)
For reference:
Bump size A 80 µm × 129 µm
B 129 µm × 80 µm
Bump height 22.5 µm
↑
(0,0)
173
174
193
1 58
69
85
86