Specifications

10–4 EPSON
SED1280
DC Electrical Characteristics
Latch-up endurance
Static breakdown resistance
VDD = 5.0 V, VSS = 0 V, Ta = –20 to 75°C
Parameter Symbol Condition
Rating
Unit
min typ max
Supply current IOP ––1mA
SCK and SID LOW-level input voltage VIL1 – – 0.8 V
EI1 to EI3 LOW-level input voltage VIL2 Vss – 1.0 V
SCK and SID HIGH-level input voltage VIH1 2.0 – – V
EI1 to EI3 HIGH-level input voltage VIH2 VDD–1.0 – VDD V
EI1 to EI3 hysteresis voltage VHYS 1––V
XSCL, LP and DO LOW-level output voltage VOL1 IOL = 0.04 mA – – 0.1VDD V
SWS1 to SWS8 LOW-level output voltage VOL2 IOL = 25 mA – – 1.25 V
LE1 to LE5 LOW-level output voltage VOL3 IOL = 2.0 mA – – 0.4 V
SOD, EO1 and EO2 LOW-level output
VOL4 IOL = 2.0 mA – – 0.4 V
voltage
XSCL, LP and DO HIGH-level output voltage VOH1 IOH = –0.04 mA 0.9VDD ––V
SWS1 to SWS8 HIGH-level output voltage VOH2 IOH = –200 µA 4.0 – – V
LE1 to LE5 HIGH-level output voltage VOH3 IOH = –200 µA 2.4 – – V
SOD, EO1 and EO2 HIGH-level output
VOH4 IOH = –200 µA 2.4 – – V
voltage
SWC1 to SWC10 pull-up resistance RUP1 51020kΩ
RST pull-up resistance RUP2 50 100 200 kΩ
COM1 to COM16 driver ON resistance RCOM IVSEG–Vnl = 0.5 V – 2 10 kΩ
SEG1 to SEG40 driver ON resistance RSEG IVSEG–Vnl = 0.5 V – 2.5 10.0 kΩ
SCK frequency fSCK 0.5 1.0 1.4 MHz
SCK duty cycle Duty 45 50 55 %
SCK rise time tr – – 200 ns
SCK fall time tf – – 200 ns
SWC1 to SEC10 input debounce time tKIN 16 – – µs
SWS1 to SWS8 instantaneous output current ISWS ––25mA
SWS1 to SWS8 total output current ΣISWS – – 100 mA
LCD driver output voltage VLCD VLCD = VDD–V5 3.0 – VDD V
VDD = 5 V, Ta = 25°C
Parameter Symbol Condition
Rating
Unit
min typ max
Input DC trigger current ITI –40 – 40 mA
Output DC trigger current ITO –40 – 40 mA
VDD = 5 V, Ta = 25°C
Parameter Symbol Condition
Rating
Unit
min typ max
Input terminal breakdown voltage VSI C = 200 pF, R = 0 Ω –250 – 250 V
Output terminal breakdown voltage VSO C = 200 pF, R = 0 Ω –250 – 250 V
VDD, VSS and V1 to V5 breakdown voltage VS C = 200 pF, R = 0 Ω –250 – 250 V