Datasheet

ManualsBrandsEVERLIGHT OPTO ManualsPhotodiodes & PhototransistorsPhototransistor 5 mm 1100 nm PT 331 C

Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1.3 Page: 1 of 7

Device No：DPT-033-001 Prepared date：07-19-2004 Prepared by：Jaine Tsai

Technical Data Sheet

5mm Phototransistor T-1 3/4

PT331C

Features

․Fast response time

․High photo sensitivity

․Pb free

Descriptions

․PT331C is a high speed and high sensitive silicon

NPN epitaxial planar phototransistor in a standard 5Φ

package. Due to is water clear epoxy the device is sensitive

to visible and near infrared radiation.

Applications

․Infrared applied system

․Floppy disk drive

․Optoelectronic switch

Device Selection Guide

Chip

LED Part No.

Material

Lens Color

PT Silicon Water Clear

Summary of content (7 pages)

PAGE 1
Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive to visible and near infrared radiation. Applications ․Infrared applied system ․Floppy disk drive ․Optoelectronic switch Device Selection Guide LED Part No.
PAGE 2
PT331C Package Dimensions Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.
PAGE 3
PT331C Electro-Optical Characteristics (Ta=25℃) Parameter Symbol Condition IC=100μA Ee=0mW/cm2 Min. Typ. Max. Units 30 --- --- V Collector – Emitter Breakdown Voltage BVCEO Emitter-Collector Breakdown Voltage IE=100μA BVECO Ee=0mW/cm2 5 --- --- V Collector-Emitter Saturation Voltage IC=2mA VCE)(sat) Ee=1mW/cm2 --- --- 0.4 V --- 15 --- --- 15 --- --- --- 100 nA 0.7 2.
PAGE 4
PT331C Typical Electro-Optical Characteristics Curves Fig.1Collector Power Dissipation vs. Ambient Temperature Fig.2 Spectral Sensitivity 100 1.0 Ta=25 C 80 0.8 60 0.6 40 0.4 20 0.2 0 -25 25 0 50 75 85 100 Fig.3 Relative Collector Current vs. Ambient Temperature 0 100 300 500 700 900 1100 1300 Fig.4 Collector Current vs. Irradiance 100 160 2 140 C 10 120 100 80 1 60 40 0.1 20 0 0 10 20 30 40 50 60 70 0.01 0.5 1 1.5 3 2 Everlight Electronics Co., Ltd.
PAGE 5
PT331C Typical Electro-Optical Characteristics Curves Fig.5 Collector Dark Current vs. Ambient Temperature Fig.6 Collector Current vs. Collector-Emitter Voltage 10 14 12 10 10 8 10 6 4 10 2 10 0 25 50 Everlight Electronics Co., Ltd. Device No：DPT-033-001 75 100 0 0 http:\\www.everlight.com Prepared date：07-19-2004 1 2 Rev 1.
PAGE 6
PT331C Reliability Test Item And Condition The reliability of products shall be satisfied with items listed below. Confidence level：90% LTPD：10% NO. Item 1 Solder Heat Test Conditions Test Hours/ Sample Cycles Sizes TEMP.：260℃±5℃ 10secs 2 Temperature Cycle H : +100℃ L : -40℃ 3 Thermal Shock Failure Judgement Criteria Ac/Re 22pcs 0/1 15mins 50Cycles 5mins 15mins 22pcs 0/1 5mins 50Cycles 10secs 5mins 22pcs H :+100℃ L :-10℃ IC(ON)≦L×0.
PAGE 7
PT331C Packing Quantity Specification 1.500PCS/1Bag，5Bags/1Box 2.10Boxes/1Carton Label Form Specification CPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production Place PT331C Notes 1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2.