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FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

FOD814 Series, FOD817 Series Rev. 1.1.5

December 2011

FOD814 Series, FOD817 Series

4-Pin High Operating Temperature

Phototransistor Optocouplers

Features

■

AC input response (FOD814 only)

■

Applicable to Pb-free IR reflow soldering

■

Compact 4-pin package

■

Current transfer ratio in selected groups:

FOD814: 20–300% FOD817: 50–600%

FOD814A: 50–150% FOD817A: 80–160%

FOD817B: 130–260%

FOD817C: 200–400%

FOD817D: 300–600%

■

C-UL, UL and VDE approved

■

High input-output isolation voltage of 5000Vrms

■

Minimum BV

CEO

of 70V guaranteed

■

Higher operating temperatures (versus H11AXXX

counterparts)

Applications

FOD814 Series

■

AC line monitor

■

Unknown polarity DC sensor

■

Telephone line interface

FOD817 Series

■

Power supply regulators

■

Digital logic inputs

■

Microprocessor inputs

Description

The FOD814 consists of two gallium arsenide infrared

emitting diodes, connected in inverse parallel, driving a

silicon phototransistor output in a 4-pin dual in-line

package. The FOD817 Series consists of a gallium

arsenide infrared emitting diode driving a silicon

phototransistor in a 4-pin dual in-line package.

Functional Block Diagram

1ANODE, CATHODE

3CATHODE, ANODE

COLLECTOR

EMITTER

3 EMITTER

COLLECTORANODE

CATHODE

FOD814 FOD817

Summary of content (12 pages)

PAGE 1
FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features Description ■ AC input response (FOD814 only) The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
PAGE 2
Value Symbol Parameter FOD814 Units FOD817 TOTAL DEVICE TSTG Storage Temperature TOPR Operating Temperature TSOL Lead Solder Temperature -55 to +150 -55 to +105 °C -55 to +110 °C 260 for 10 sec °C 125 Max. °C TJ Junction Temperature θJC Junction-to-Case Thermal Resistance 210 °C/W Total Power Dissipation 200 mW PTOT EMITTER IF Continuous Forward Current VR Reverse Voltage ±50 50 mA PD Power Dissipation Derate above 100°C 70 1.
PAGE 3
Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit V EMITTER VF Forward Voltage IR Reverse Leakage Current Ct Terminal Capacitance FOD814 IF = ±20mA 1.2 1.4 FOD817 IF = 20mA 1.2 1.4 FOD817 VR = 4.0V 10 µA pF FOD814 V = 0, f = 1kHz 50 250 FOD817 V = 0, f = 1kHz 30 250 Collector Dark Current FOD814 VCE = 20V, IF = 0 FOD817 VCE = 20V, IF = 0 Collector-Emitter Breakdown Voltage FOD814 IC = 0.1mA, IF = 0 70 FOD817 IC = 0.
PAGE 4
Isolation Characteristics Symbol Characteristic Device Test Conditions VISO Input-Output Isolation Voltage(3) FOD814, f = 60Hz, t = 1 min, FOD817 II-O ≤ 2µA RISO Isolation Resistance FOD814, VI-O = 500VDC FOD817 CISO Isolation Capacitance FOD814, VI-O = 0, f = 1 MHz FOD817 Min. Typ.* Max. 5000 5x1010 Units Vac(rms) 1x1011 0.6 Ω 1.0 pf *Typical values at TA = 25°C Notes: 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 7. 3.
PAGE 5
COLLECTOR POWER DISSIPATION PC (mW) 200 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current Ic = 0.5mA 1mA 3mA 5mA 5 4 2 1 0 2.5 5.0 7.5 10.0 12.5 FORWARD CURRENT IF (mA) CURRENT TRANSFER RATIO CTR ( %) FORWARD CURRENT IF (mA) 75oC o 50 C 25oC 0oC o -30 C o -55 C 1.
PAGE 6
Fig. 8 Collector Current vs. Collector-Emitter Voltage (FOD817) Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814) 30 50 I F = 30mA 40 20 m A 30 Pc (M AX.) 10mA 20 I IF = 30mA COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta= 25°C 5mA 10 Pc(MAX.) 20 15 10mA 10 5m A 5 1m A 0 0 0 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR-EMITTER VOLTAGE VCE (V) Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature Fig. 10 Collector-Emitter Saturation Voltage vs.
PAGE 7
Fig. 13 Response Time vs. Load Resistance RESPONSE TIME (µs) 50 20 VCE = 2V Ic= 2mA Ta = 25°C Fig. 14 Frequency Response tr VOLTAGE GAIN AV (dB) 100 tf 10 5 td 2 ts 1 0.5 VCE = 2V Ic = 2mA Ta = 25°C 0 RL=10k 1k 100 -10 0.2 -20 0.2 0.1 COLLECTOR DARK CURRENT ICEO (nA) 0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (kΩ) 10 0.5 15 2 10 100 FREQUENCY f (kHz) 1000 Fig. 15 Collector Dark Current vs. Ambient Temperature 10000 VCE = 20V 1000 100 10 1 0.1 0.
PAGE 8
Through Hole Surface Mount 0.276 (7.00) 0.236 (6.00) 0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.130 (3.30) 0.091 (2.30) 0.200 (5.10) 0.161 (4.10) SEATING PLANE SEATING PLANE 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.051 (1.30) 0.043 (1.10) 0.020 (0.51) TYP 0.276 (7.00) 0.236 (6.00) 0.010 (0.26) 0.049 (1.25) 0.030 (0.76) 0.024 (0.60) 0.004 (0.10) 0.412 (10.46) 0.388 (9.86) 0.010 (0.26) 0.150 (3.80) 0.110 (2.80) 0.110 (2.79) 0.090 (2.
PAGE 9
Option Part Number Example Description S FOD814S Surface Mount Lead Bend SD FOD814SD Surface Mount; Tape and reel 300 FOD814300 VDE Approved 300W FOD814300W VDE Approved, 0.
PAGE 10
P2 Ø1.55±0.05 P0 1.75±0.1 F W B0 A0 P1 0.3±0.05 K0 Note: All dimensions are in millimeters. Symbol Description Dimensions in mm (inches) W Tape wide 16 ± 0.3 (.63) P0 Pitch of sprocket holes F P2 Distance of compartment 7.5 ± 0.1 (.295) 2 ± 0.1 (.079) P1 Distance of compartment to compartment 12 ± 0.1 (.472) A0 Compartment 4 ± 0.1 (.15) 10.45 ± 0.1 (.411) B0 5.30 ± 0.1 (.209) K0 4.25 ± 0.1 (.167) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.
PAGE 11
Temperature (°C) Tp Tsmax Ramp-down Tsmin 25°C Soldering zon ts (Preheat) Time (sec) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) 100°C ~ 150°C 60 ~ 120 sec 150°C ~ 200°C 60 ~120 sec Melt soldering zone 183°C 60 ~ 120 sec 217°C 30 ~ 90 sec Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C Ramp-down rate 6°C/sec max. 6°C/sec max.
PAGE 12
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.5 www.fairchildsemi.