Datasheet

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4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers

4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6

September 2009

4N38M, H11D1M, H11D2M, H11D3M, MOC8204M

High Voltage Phototransistor Optocouplers

Features

■

High voltage:

– MOC8204M, BV

CER

= 400V

– H11D1M, H11D2M, BV

CER

= 300V

– H11D3M, BV

CER

= 200V

■

High isolation voltage:

– 7500 V

peak, 1 second

■

Underwriters Laboratory (UL) recognized

File # E90700, Volume 2

■

IEC 60747-5-2 approved (ordering option V)

Applications

■

Power supply regulators

■

Digital logic inputs

■

Microprocessor inputs

■

Appliance sensor systems

■

Industrial controls

General Description

The 4N38M, H11DXM and MOC8204M are photo-

transistor-type optically coupled optoisolators. A gallium

arsenide infrared emitting diode is coupled with a high

voltage NPN silicon phototransistor. The device is sup-

plied in a standard plastic six-pin dual-in-line package.

Schematic Package Outlines

EMITTER

COLLECTOR

ANODE

CATHODE

BASE

N/C

Summary of content (9 pages)

PAGE 1
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description ■ High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
PAGE 3
Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit All 1.15 1.5 All -1.8 mV/°C 25 V 50 pF 65 pF EMITTER VF Forward Voltage(2) ∆VF ∆TA Forward Voltage Temp. Coefficient BVR Reverse Breakdown Voltage IR = 10µA All CJ Junction Capacitance VF = 0V, f = 1MHz All IF = 10mA 6 VF = 1V, f = 1MHz IR Reverse Leakage Current(2) VR = 6V All 0.
PAGE 4
Isolation Characteristics Symbol VISO Characteristic Isolation Voltage Test Conditions Device Min. All 7500 11 f = 60Hz, t = 1 sec. RISO Isolation Resistance VI-O = 500 VDC All CISO Isolation Capacitance f = 1MHz All 10 Typ.* Max. Units VACPEAK Ω 0.2 pF *All Typical values at TA = 25°C Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
PAGE 5
Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized Output Characteristics NORMALIZED ICER – OUTPUT CURRENT VF – FORWARD VOLTAGE (V) 1.8 1.7 1.6 1.5 1.4 TA = -55˚C 1.3 TA = 25˚C 1.2 1.1 TA = 100˚C 1.0 1 10 Normalized to: VCE = 10V IF = 10mA RBE = 106 Ω TA = 25˚C 10 IF = 50mA IF = 10mA 1 IF = 5mA 0.1 0.01 0.1 100 1 IF – LED FORWARDCURRENT (mA) Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 1 0.1 0.01 IF = 10mA 1 IF = 5mA 0.
PAGE 6
Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.
PAGE 7
Option Order Entry Identifier (Example) Description No option H11D1M Standard Through Hole Device (50 units per tube) S H11D1SM SR2 H11D1SR2M T H11D1TM 0.4" Lead Spacing V H11D1VM VDE 0884 TV H11D1TVM VDE 0884, 0.
PAGE 8
12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.
PAGE 9
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