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H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

H11G1M, H11G2M, H11G3M Rev. 1.0.4

September 2009

H11G1M, H11G2M, H11G3M

High Voltage Photodarlington Optocouplers

Features

■

High BV

CEO

– Minimum 100V for H11G1M

– Minimum 80V for H11G2M

– Minimum 55V for H11G3M

■

High sensitivity to low input current

(Min. 500% CTR at I

= 1mA)

■

Low leakage current at elevated temperature

(Max. 100µA at 80°C)

■

Underwriters Laboratory (UL) recognized

File # E90700, Volume 2

■

IEC 60747-5-2 approved (ordering option V)

Applications

■

CMOS logic interface

■

Telephone ring detector

■

Low input TTL interface

■

Power supply isolation

■

Replace pulse transformer

General Description

The H11GXM series are photodarlington-type optically

coupled optocouplers. These devices have a gallium

arsenide infrared emitting diode coupled with a silicon

darlington connected phototransistor which has an inte-

gral base-emitter resistor to optimize elevated tempera-

ture characteristics.

Schematic Package Outlines

EMITTER

COLLECTOR

ANODE

CATHODE

BASE

N/C

Summary of content (9 pages)

PAGE 1
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description ■ High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
PAGE 2
Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL 260 for 10 sec °C 260 mW Derate Above 25°C 3.5 mW/°C IF Forward Input Current 60 mA VR Reverse Input Voltage 6.0 V Forward Current – Peak (1µs pulse, 300pps) 3.0 A LED Power Dissipation @ TA = 25°C 100 mW 1.
PAGE 3
Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit All 1.3 1.50 All -1.8 mV/°C 25 V 50 pF EMITTER VF Forward Voltage ∆VF ∆TA Forward Voltage Temp. Coefficient IF = 10mA BVR Reverse Breakdown Voltage IR = 10µA All CJ Junction Capacitance VF = 0V, f = 1MHz All 3.0 VF = 1V, f = 1MHz IR Reverse Leakage Current V 65 VR = 3.0V All 0.
PAGE 4
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.
PAGE 5
Fig. 2 Normalized Output Current vs. Temperature Fig. 1 Output Current vs. Input Current 100 IC – NORMALIZED OUTPUT CURRENT IC – NORMALIZED OUTPUT CURRENT 10 1 Normalized to: VCE = 5V IF = 1mA 0.1 0.01 0.001 0.1 1 IF = 50mA 10 IF = 5mA IF = 1mA 1 IF = 0.5mA 0.1 0.01 -60 10 -40 0 20 40 60 80 100 120 90 100 Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature Fig. 3 Output Current vs.
PAGE 6
Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.
PAGE 7
Option Order Entry Identifier (Example) No option H11G1M S H11G1SM SR2 H11G1SR2M T H11G1TM 0.4" Lead Spacing V H11G1VM VDE 0884 TV H11G1TVM VDE 0884, 0.
PAGE 8
12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation H11G1M, H11G2M, H11G3M Rev. 1.0.4 www.fairchildsemi.
PAGE 9
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