Datasheet

Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Collector-Emitter Voltage V
CE
30 V
Emitter-Collector Voltage V
EC
5V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Sensitivity Wavelength !
PS
— 880 — nm
Reception Angle " — ±12 — Deg.
Collector Emitter Dark Current V
CE
= 10 V, E
e
= 0 I
CEO
— — 100 nA
Collector Emitter Breakdown I
C
= 1 mA BV
CEO
30 — — V
Emitter Collector Breakdown I
E
= 100 µA BV
ECO
5——V
On-State Collector Current
(5)
QSD122 1.00 — 6.00
QSD123 E
e
= 0.5 mW/cm
2
, V
CE
= 5 V I
C (ON)
4.00 — 16.00 mA
QSD124 6.00 — —
Saturation Voltage
(5)
E
e
= 0.5 mW/cm
2
, I
C
= 0.5 mA V
CE (SAT)
— — 0.4 V
Rise Time
V
CC = 5 V, R
L
= 100 V IC = 0.2 mA
t
r
—7—
µs
Fall Time t
f
—7—
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.
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PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122 QSD123 QSD124