Datasheet

DSEP2x61-12A
200 600 10000 400 800
200
220
240
260
280
300
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000 400 800
0
20
40
60
80
100
120
0001001
0.0
2.5
5.0
7.5
10.0
12.5
15.0
01 2 3
0
20
40
60
80
100
V
FR
t
fr
I
RM
Q
r
I
F
[A]
V
F
[V]
Q
r
[nC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs]
K
f
T
VJ
[°C]
t
rr
[ns]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
V
FR
[V]
t [s]
Z
thJC
[K/W]
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Recovery time
t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage
V
FR
and tfr versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
T
VJ
= 150°C
100°C
25°C
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
T
VJ
= 125°C
V
R
=800V
T
VJ
= 125°C
V
R
= 800 V
T
VJ
= 125°C
I
F
= 60 A
T
VJ
= 125°C
V
R
= 800 V
IXYS reserves the right to change limits, conditions and dimensions.
©
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved