Datasheet
© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 150° C 500 V
V
DGR
T
J
= 25° C to 150° C; R
GS
= 1 MΩ 500 V
V
GSM
Transient ± 40 V
V
GSM
Continuous ± 30 V
I
D25
T
C
= 25° C80A
I
L
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25° C, pulse width limited by T
JM
200 A
I
AR
T
C
= 25° C80A
E
AR
T
C
= 25° C80mJ
E
AS
T
C
= 25° C 3.5 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 20 V/ns
T
J
≤ 150° C, R
G
= 2 Ω
P
D
T
C
= 25° C 1040 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 ° C
T
SOLD
Plastic body for 10 seconds 260 ° C
F
C
Mounting force (PLUS247) 20..120/4.5..25 N/lb
M
d
Mounting torque (TO-264) 1.13/10 Nm/lb.in.
Weight TO-264 10 g
DS99437E(03/06)
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 500 µA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA 3.0 5.0 V
I
GSS
V
GS
= ± 30 V
DC
, V
DS
= 0 ± 200 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 125° C2mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
65 mΩ
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
IXFK 80N50P
IXFX 80N50P
V
DSS
= 500 V
I
D25
= 80 A
R
DS(on)
≤≤
≤≤
≤ 65 m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200 ns
TO-264 (IXFK)
S
G
D
D (TAB)
PLUS247 (IXFX)
D (TAB)
D
G = Gate S = Source
D = Drain Tab = Collector
S
PLUS247 6 g