Datasheet

© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 1mA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.0 5.5 V
I
GSS
V
GS
= ±30 V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
100 μA
V
GS
= 0V T
J
= 125°C 5 mA
R
DS(on)
V
GS
= 10V, I
D
= 19A, Note 1 280 mΩ
DS99512A(05/08)
HiPerFET
TM
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low Intrinsic R
G
High dV/dt, Low t
rr
IXFL38N100Q2
V
DSS
= 1000V
I
D25
= 29A
R
DS(on)
≤≤
≤≤
≤ 280m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 300ns
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C29A
I
DM
T
C
= 25°C, pulse width limited by T
JM
152 A
I
A
T
C
= 25°C38A
E
AS
T
C
= 25°C5J
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 20 V/ns
P
D
T
C
= 25°C 380 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10s 260 °C
F
C
Mounting force 30..120/6.7..27 N/lbs
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
≤ 1 mA t = 1 s 3000 V~
Weight 10 g
ISOPLUS264
TM
( IXFL)
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features

Electrically isolated mounting tab

Double metal process for low gate
resistance

Unclamped Inductive Switching
(UIS) rated

Low package inductance
- easy to drive and to protect

Fast intrinsic diode
Applications

DC-DC converters

Switched-mode and resonant-mode
power supplies

DC choppers

Pulse generation

Laser drivers
Advantages

2500 V~ Electrical isolation

ISOPLUS 264
TM
package for clip or
spring mounting

Space savings

High power density