Datasheet

© 2011 IXYS CORPORATION, All Rights Reserved
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V
DSS
= 500V
I
D25
= 16A
R
DS(on)
≤≤
≤≤
≤
400m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200ns
DS99357G(05/11)
IXFA16N50P
IXFP16N50P
IXFH16N50P
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C R
GS
= 1MΩ 500 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C16A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
35 A
I
A
T
C
= 25°C16A
E
AS
T
C
= 25°C 750 mJ
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
,T
J
≤ 150°C 10 V/ns
P
D
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 Seconds 260 °C
M
d
Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nmlb.in.
F
C
Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5mA 3.0 5.5 V
I
GSS
V
GS
= ± 30V, V
DS
= 0V ± 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 15 μA
T
J
= 125°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 400 mΩ
Polar
TM
HiperFET
TM
Power MOSFET
Features
z
International Standard Packages
z
Avalanche Rated
z
Fast Intrinsic Diode
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
Switched-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
S
D
D (Tab)
TO-263 AA (IXFA)
G
S
D (Tab)
G
D
S
TO-220AB (IXFP)
D (Tab)