Datasheet

© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 500 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 50 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
240 A
I
A
T
C
= 25°C 80A
E
AS
T
C
= 25°C5J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 50 V/ns
P
D
T
C
= 25°C 570 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
V
ISOL
50/60 Hz, 1 Minute 2500 V∼
F
C
Mounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.5 6.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 μA
T
J
= 125°C 2 mA
R
DS(on)
V
GS
= 10V, I
D
= 40A, Note 1 72 mΩ
HiperFET
TM
Power MOSFET
Q3-Class
IXFR80N50Q3
V
DSS
= 500V
I
D25
= 50A
R
DS(on)
≤≤
≤≤
≤ 72m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 250ns
DS100323A(06/11)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z
Isolated Mounting Surface
z
Low Intrinsic Gate Resistance
z
2500V~ Electrical Isolation
z
Fast Intrinsic Rectifier
z
Avalanche Rated
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
Temperature and Lighting Controls
(Electrically Isolated Tab)
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
D
Isolated Tab
Preliminary Technical Information