Datasheet

SPEC NO: DSAA4871 REV NO: V.5 DATE: FEB/22/2006 PAGE: 1 OF 3

APPROVED: J. Lu CHECKED: Allen Liu DRAWN: W.J.ZHU

Package Dimensions

T-1 3/4 (5mm) INFRA-RED EMITTING DIODE

P/N: L-53SF4BT

Description

SF4 Made with Gallium Aluminum Arsenide Infrared

Emitting diodes.

Features



MECHANICALLY AND SPECTRALLY MATCHED TO THE

L-53P3C PHOTOTRANSISTOR.



BLUE TRANSPARENT LENS.



RoHS COMPLIANT.

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25(0.01") unless otherwise noted.

3. Lead spacing is measured where the leads emerge from the package.

4. Specifications are subject to change without notice.

PAGE 1
T-1 3/4 (5mm) INFRA-RED EMITTING DIODE P/N: L-53SF4BT Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE L-53P3C PHOTOTRANSISTOR. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. BLUE TRANSPARENT LENS. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice.
PAGE 2
Selection Guide Part No. L-53SF4BT Dice Po (mW/sr) [2] @ 20mA *50mA[3] Lens Type GaAlAs Viewing Angle [1] Min. Typ. 2θ θ1/2 4 20 30° *7 *30 30° BLUE TRANSPARENT Notes: 1.θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. Radiant Intensity/ luminous flux: +/-15%. 3.* Luminous intensity with asterisk is measured at 50mA. Electrical / Optical Characteristics at TA=25°C Symbol Typ. Max.
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L-53SF4BT SPEC NO: DSAA4871 REV NO: V.5 DATE: FEB/22/2006 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: W.J.