Datasheet

DS2430A
16 of 19
ABSOLUTE MAXIMUM RATINGS
Voltage Range on DATA to Ground -0.5V to +6.0V
DATA Sink Current 20mA
Operating Temperature Range -40°C to +85°C
Junction Temperature +150°C
Storage Temperature Range -55°C to +125°C
Lead Temperature (soldering, 10s) +300°C
Soldering Temperature (reflow)
TSOC +260°C
TO-92 +250°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to the
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= -40°C to +85°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DATA PIN GENERAL DATA
1-Wire Pullup Voltage
V
PUP
(Notes 2)
2.8
5.25
V
1-Wire Pullup Resistance
R
PUP
(Notes 2, 3)
0.3
2.2
kΩ
Input Capacitance
C
IO
(Notes 4, 5)
1000
pF
Input Load Current
I
L
DATA pin at V
PUP
0.05
15
µA
High-to-Low Switching
Threshold
V
TL
(Notes 5, 6, 7) 0.46
V
PUP
-
1.8V
V
Input Low Voltage
V
IL
(Notes 2, 8)
0.5
V
Low-to-High Switching
Threshold
V
TH
(Notes 5, 6, 9) 1.0
V
PUP
-
1.1V
V
Switching Hysteresis
V
HY
(Notes 5, 6, 10)
0.21
1.70
V
Output Low Voltage
V
OL
At 4mA (Note 11)
0.4
V
Recovery Time
t
REC
R
PUP
= 2.2kΩ (Notes 2,12)
5
µs
Rising-Edge Hold-off
Time
t
REH
(Notes 5, 13)
0.5 5.0 µs
Timeslot Duration
t
SLOT
(Notes 2, 14)
65
µs
DATA PIN, 1-WIRE RESET, PRESENCE DETECT CYCLE
Reset Low Time
t
RSTL
(Note 2)
480
960
µs
Presence Detect High
Time
t
PDH
15 60 µs
Presence Detect Low
Time
t
PDL
60 240 µs
Presence Detect Sample
Time
t
MSP
(Notes 2, 15)
60 75 µs
DATA PIN, 1-Wire WRITE
Write-0 Low Time
t
W0L
(Notes 2, 16)
60
120 - ε
µs
Write-1 Low Time
t
W1L
(Notes 2, 16)
1
15 - ε
µs
DATA PIN, 1-Wire READ
Read Low Time
t
RL
(Notes 2, 17)
1
15 - δ
µs
Read Sample Time
t
MSR
(Notes 2, 17)
t
RL
+ δ
15
µs
EEPROM
Programming Current
I
PROG
(Notes 5, 18)
0.5
mA
Programming Time
t
PROG
(Note 19)
10
ms
Write/Erase Cycles
(Endurance)
(Notes 20, 21)
N
CY
At 25°C
200k

At 85°C (worst case)
50k
Data Retention (Notes 22,
23, 24)
t
DR
At 85°C (worst case) 40 years
NOT RECOMMENDED FOR NEW DESIGNS