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1. Product proﬁle

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a medium power

SOT89 (SC-62/TO-243) ﬂat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: 2PB1424.

1.2 Features

n Low collector-emitter saturation voltage V

CEsat

n High collector current capability I

and I

n High collector current gain (h

) at high I

n High efﬁciency due to less heat generation

n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

n DC-to-DC conversion

n MOSFET gate driving

n Motor control

n Charging circuits

n Power switches (e.g. motors, fans)

n Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

[1] Pulse test: t

≤ 300 µs; δ≤0.02.

2PD2150

20 V, 3 A NPN low V

CEsat

(BISS) transistor

Rev. 02 — 2 January 2007 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 20 V

collector current - - 3 A

peak collector current single pulse;

≤ 1ms

--5A

CEsat

collector-emitter

saturation voltage

= 2 A; I

= 0.1 A

[1]

- 0.2 0.5 V

Summary of content (13 pages)

PAGE 1
2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 — 2 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. 1.
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PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Symbol 2 3 3 2 1 1 sym042 3. Ordering information Table 3. Ordering information Type number 2PD2150 Package Name Description Version SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code 2PD2150 M2 5.
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2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa943 2.4 (1) Ptot (W) 1.6 0.8 (2) 0 −75 −25 0 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6.
PAGE 4
2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa944 103 duty cycle = Zth(j-a) (K/W) 1 102 0.75 0.5 0.33 0.1 0.2 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa945 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 10 0.2 0.33 0.1 0.05 0.02 1 0.
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2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 0.1 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 0.1 µA hFE DC current gain VCE = 2 V; IC = 0.1 A 180 - 390 - 0.2 0.5 V VCEsat collector-emitter saturation voltage IC = 2 A; IB = 0.
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2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa956 104 006aaa957 2.0 IB (mA) = 20 IC (A) IC (mA) 8 10 18 16 14 12 1.6 103 6 1.2 (1) 102 (2) 4 (3) 0.8 2 10 0.4 0 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1.4 VBE (V) 0.2 0.4 0.6 0.8 1.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 4. Collector current as a function of base-emitter voltage; typical values 006aaa958 5 30 50 IC 45 (A) 40 4 35 Fig 5.
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2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa960 1 VCEsat (V) 006aaa961 1 VCEsat (V) 10−1 10−1 (1) (2) (3) (1) (2) (3) 10−2 10−2 10−3 1 10 102 103 104 10−3 1 102 10 103 IC (mA) IC/IB = 10 IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa962 1 104 IC (mA) VCEsat (V) Fig 9.
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2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa964 103 Cib (pF) 006aaa965 103 Cob (pF) 102 10 10−1 102 1 102 10 10 10−1 VEB (V) 102 10 VCB (V) Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A Fig 12. Common-base input capacitance as a function of emitter-base voltage; typical values Fig 13. Common-base output capacitance as a function of collector-base voltage; typical values 2PD2150_2 Product data sheet 1 © NXP B.V. 2007.
PAGE 9
2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 8. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 14. Package outline SOT89 (SC-62/TO-243) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 10
2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 10. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 0.50 1.20 Dimensions in mm 1.20 1.00 (3x) 3 2 1 msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 SOT89 standard mounting conditions for reflow soldering Fig 15. Reflow soldering footprint SOT89 (SC-62/TO-243) 6.60 2.40 3.50 2 3 1 solder lands 7.60 0.50 1.20 solder resist occupied area 3.
PAGE 11
2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes 2PD2150_2 20070102 Product data sheet - 2PD2150_1 Modifications: 2PD2150_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate.
PAGE 12
2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .