Datasheet

2PD2150_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 2 January 2007 11 of 13
NXP Semiconductors
2PD2150
20 V, 3 A NPN low V
CEsat
(BISS) transistor
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
2PD2150_2 20070102 Product data sheet - 2PD2150_1
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 1 “Quick reference data”: I
C
collector current added
• Table 1 “Quick reference data”: I
CM
peak collector current maximum value adapted
• Table 1 “Quick reference data”: V
CEsat
collector-emitter saturation voltage added
• Table 5 “Limiting values”: V
CEO
collector-emitter voltage maximum value adapted
• Table 5 “Limiting values”: I
C
collector current maximum value adapted
• Table 5 “Limiting values”: I
CM
peak collector current maximum value adapted
• Table 5 “Limiting values”: P
tot
total power dissipation for ceramic PCB condition added
• Figure 1 “Power derating curves”: adapted
• Table 6 “Thermal characteristics”: adapted
• Table 6 “Thermal characteristics”: R
th(j-a)
thermal resistance from junction to ambient for
ceramic PCB condition added
• Figure 2: t
p
pulse time redefined to pulse duration
• Figure 3: added
• Table 7 “Characteristics”: V
CEsat
collector-emitter saturation voltage typical value added
• Table 7 “Characteristics”: f
T
transition frequency conditions slightly changed
• Table 7 “Characteristics”: C
ib
common-base input capacitance added
• Table 7 “Characteristics”: C
ob
common-base output capacitance added
• Figure 4, 6, 10, 11, 12, 13 and 16: added
• Figure 5, 7, 8 and 9: adapted
• Section 12 “Legal information”: updated
2PD2150_1 20050422 Product data sheet - -