Datasheet

2PD2150_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 2 January 2007 2 of 13
NXP Semiconductors
2PD2150
20 V, 3 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter
2 collector
3 base
321
sym042
1
2
3
Table 3. Ordering information
Type number Package
Name Description Version
2PD2150 SC-62 plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
SOT89
Table 4. Marking codes
Type number Marking code
2PD2150 M2
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 40 V
V
CEO
collector-emitter voltage open base - 20 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 3 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-5A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 0.5 W
[2]
-2W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C