Datasheet

2PD2150_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 2 January 2007 3 of 13
NXP Semiconductors
2PD2150
20 V, 3 A NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
006aaa943
T
amb
(°C)
−75 17512525075−25
0.8
1.6
2.4
P
tot
(W)
0
(2)
(1)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 250 K/W
[2]
--62K/W