Datasheet

2PD2150_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 2 January 2007 5 of 13
NXP Semiconductors
2PD2150
20 V, 3 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
= 0 A - - 0.1 µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 0.1 µA
h
FE
DC current gain V
CE
=2V; I
C
= 0.1 A 180 - 390
V
CEsat
collector-emitter
saturation voltage
I
C
= 2 A; I
B
= 0.1 A
[1]
- 0.2 0.5 V
f
T
transition frequency V
CE
=2V; I
E
= −0.5 A;
f = 100 MHz
- 220 - MHz
C
ib
common-base input
capacitance
V
EB
=5V; I
E
=i
e
=0A;
f=1MHz
- 180 - pF
C
ob
common-base output
capacitance
V
CB
=10V;I
E
=i
e
=0A;
f=1MHz
-20-pF