Datasheet

2PD2150_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 2 January 2007 8 of 13
NXP Semiconductors
2PD2150
20 V, 3 A NPN low V
CEsat
(BISS) transistor
T
amb
=25°C; f = 1 MHz; I
E
=i
e
=0A T
amb
=25°C; f = 1 MHz; I
E
=i
e
=0A
Fig 12. Common-base input capacitance as a function
of emitter-base voltage; typical values
Fig 13. Common-base output capacitance as a
function of collector-base voltage; typical
values
006aaa964
V
EB
(V)
10
−1
10
2
101
10
2
10
3
C
ib
(pF)
10
006aaa965
V
CB
(V)
10
−1
10
2
101
10
2
10
3
C
ob
(pF)
10