Datasheet

74HC_HCT2G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 10 — 3 October 2013 8 of 23
NXP Semiconductors 74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
10.3 ON resistance test circuit and graphs
11. Dynamic characteristics
R
ON
=V
SW
/ I
SW
.T
amb
= 25 C.
Fig 8. Test circuit for measuring ON resistance Fig 9. Typical ON resistance as a function of
input voltage
001aaj467
V
I
V
IH
V
CC
GND
nZnY
nE
V
SW
I
SW
20
40
60
R
ON
(Ω)
0
V
I
(V)
0108462
mnb006
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 9.0 V
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 12.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
74HC2G66
t
pd
propagation delay nY to nZ or nZ to nY; R
L
=  ;
see Figure 10
[2]
V
CC
= 2.0 V - 6.5 65 - 80 ns
V
CC
= 4.5 V - 2 13 - 15 ns
V
CC
= 6.0 V - 1.5 11 - 14 ns
V
CC
= 9.0 V - 1.2 10 - 12 ns
t
en
enable time nE to nY or nZ; see Figure 11
[2]
V
CC
= 2.0 V - 40 125 - 150 ns
V
CC
= 4.5 V - 12 29 - 30 ns
V
CC
= 6.0 V - 10 21 - 26 ns
V
CC
= 9.0 V - 7 16 - 20 ns
t
dis
disable time nE to nY or nZ; see Figure 11
[2]
V
CC
= 2.0 V - 21 145 - 175 ns
V
CC
= 4.5 V - 12 29 - 35 ns
V
CC
= 6.0 V - 11 28 - 33 ns
V
CC
= 9.0 V - 10 23 - 27 ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
[3]
-9-- -pF