Datasheet

NXP Semiconductors
ACTT2X-800E
AC Thyristor Triac power switch
ACTT2X-800E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 15 August 2014 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state;
Fig. 6
- - 2 kV
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G+;
T
j
= 25 °C; Fig. 8
- - 10 mA
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 8
- - 10 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 8
- - 10 mA
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C 850 - - V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 13
500 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 2 A;
dV
com
/dt = 10 V/µs; gate open circuit;
Fig. 14; Fig. 15
3 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
ACTT2X-800E TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A