Datasheet

NXP Semiconductors
ACTT2X-800E
AC Thyristor Triac power switch
ACTT2X-800E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 15 August 2014 9 / 13
T
j
(°C)
-50 1501000 50
003aag677
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
T
j
(°C)
25 12510050 75
003aag763
2
4
6
A
B
0
A = dV
D
/dt at condition T
j
°C
B = dV
D
/dt at condition T
j
[125] °C
Fig. 13. Normalized rate of rise of off-state voltage as a
function of junction temperature
T
j
(°C)
25 12510050 75
003aag764
4
8
12
A
B
0
A = dI
com
/dt at condition T
j
°C
B = dI
com
/dt at condition T
j
[125] °C
V
D
= 400 V
Fig. 14. Normalized critical rate of rise of commutating
current as a function of junction temperature
003aag765
20
10
30
40
A [B]
A [spec]
0
B (V/µs)
10
-1
10
2
101
A [B] = dI
com
/dt at condition B, dV
com
/dt
A [spec] is the data sheet value for dI
com
/dt
turn-off time is less than 20 ms
Fig. 15. Normalized critical rate of change of
commutating current as a function of critical
rate of change of commutating voltage;
minimum values