Datasheet

1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1] When switched from I
F
= 30 mA to I
R
=30mA; R
L
= 100 Ω; measured at I
R
=3mA.
BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009 Product data sheet
Table 1. Product overview
Type number Package Configuration
NXP JEITA
BAS101 SOT23 - single
BAS101S SOT23 - dual series
 High switching speed: t
rr
≤ 50 ns  Low capacitance: C
d
≤ 2pF
 Low leakage current  Reverse voltage: V
R
≤ 300 V
 Repetitive peak reverse voltage:
V
RRM
≤ 300 V
 Small SMD plastic package
 High-speed switching  Voltage clamping
 High-voltage switching  Reverse polarity protection
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
F
forward current - - 200 mA
I
R
reverse current V
R
= 250 V - - 150 nA
V
R
reverse voltage - - 300 V
t
rr
reverse recovery time
[1]
--50ns