DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS19; BAS20; BAS21 General purpose diodes Product data sheet Supersedes data of 1999 May 26 2003 Mar 20
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 FEATURES PINNING • Small plastic SMD package PIN • Switching speed: max. 50 ns 1 anode • General application 2 not connected • Continuous reverse voltage: max. 100 V; 150 V; 200 V 3 cathode DESCRIPTION • Repetitive peak reverse voltage: max. 120 V; 200 V; 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose switching in e.g. surface mounted circuits.
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BAS19 − 120 V BAS20 − 200 V BAS21 − 250 V BAS19 − 100 V BAS20 − 150 V BAS21 − 200 V − 200 mA − 625 mA t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BAS19 BAS20 BAS21 CONDITIONS MAX. UNIT see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V VR = 100 V 100 nA VR = 100 V; Tj = 150 °C 100 µA VR = 150 V 100 nA VR = 150 V; Tj = 150 °C 100 µA VR = 200 V 100 nA VR = 200 V; Tj = 150 °C see Fig.
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 GRAPHICAL DATA MBG442 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 100 200 (1) 0 0 0 100 Tamb (oC) 200 1 (3) 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 MBG381 2 10halfpage handbook, Cd (pF) IR (µA) 0.8 10 (1) 1 (2) 0.6 1 10 MBG447 1.0 handbook, halfpage 0.4 10 2 100 0 Tj (oC) 0.2 0 200 2 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. MBG445 300 handbook, halfpage VR (V) (1) 200 (2) (3) 100 0 0 100 Tamb (oC) 200 (1) BAS21.
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA. Fig.8 Reverse recovery voltage test circuit and waveforms.
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
