DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20
NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package DESCRIPTION PIN • Switching speed: max. 50 ns BAS29 • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 110 V • Repetitive peak forward current: max.
NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current − 110 V − 90 V single diode loaded; see Fig.
NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 10 mA − 750 mV IF = 50 mA − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1 V IF = 400 mA − 1.25 V VR = 90 V − 100 nA VR = 90 V; Tj = 150 °C see Fig.
NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 GRAPHICAL DATA MBG440 300 MBH280 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 400 (1) 100 (2) (3) 200 (2) 0 0 0 100 Tamb (oC) 200 0 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 MBH282 102 handbook, halfpage MGD003 40 handbook, halfpage IR (µA) Cd (pF) 10 30 (1) 1 (2) 20 10−1 10 10−2 100 0 Tj (oC) 0 200 0 10 (1) VR = 90 V; maximum values. (2) VR = 90 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature.
NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
