Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesSchottky Diode

1. Product profile

1.1 General description

Planar Schottky barrier double diode with an integrated guard ring for stress protection.

Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Low forward voltage

 Guard-ring protected

 Small SMD plastic package

1.3 Applications

 Ultra high-speed switching

 Voltage clamping

 Protection circuits

 Blocking diodes

1.4 Quick reference data

2. Pinning information

BAT74

Schottky barrier double diode

Rev. 03 — 19 April 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

forward current - - 200 mA

reverse voltage - - 30 V

forward voltage I

= 100 mA - - 800 mV

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 cathode (diode 2)

3 anode (diode 2)

4 anode (diode 1)

006aaa4

Summary of content (10 pages)

PAGE 1
BAT74 Schottky barrier double diode Rev. 03 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Low forward voltage Guard-ring protected Small SMD plastic package 1.
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BAT74 NXP Semiconductors Schottky barrier double diode 3. Ordering information Table 3. Ordering information Type number BAT74 Package Name Description Version - plastic surface-mounted package; 4 leads SOT143B 4. Marking Table 4. Marking codes Type number Marking code[1] BAT74 *L4 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BAT74 NXP Semiconductors Schottky barrier double diode 6. Thermal characteristics Table 6. Symbol Rth(j-a) [1] Thermal characteristics Parameter Conditions Min Typ Max Unit - - 500 K/W Min Typ Max Unit - - 240 mV - - 320 mV IF = 10 mA - - 400 mV IF = 30 mA - - 500 mV thermal resistance from junction to ambient in free air [1] Refer to SOT143B standard mounting conditions. 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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BAT74 NXP Semiconductors Schottky barrier double diode msa892 103 IF (mA) msa893 103 IR (μA) (1) (2) (3) 102 (1) 102 (2) 10 10 1 10−1 (1) (2) (3) 1 0 0.4 0.8 VF (V) 1.2 (3) 10−1 0 (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2.
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BAT74 NXP Semiconductors Schottky barrier double diode 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Fig 5. Reverse recovery time test circuit and waveforms 9. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm Fig 6. 04-11-16 Package outline BAT74 (SOT143B) 10.
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BAT74 NXP Semiconductors Schottky barrier double diode 11. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 solder paste 3 occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 Fig 7. sot143b_fr Reflow soldering footprint BAT74 (SOT143B) 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 Fig 8.
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BAT74 NXP Semiconductors Schottky barrier double diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAT74_3 20100419 Product data sheet - BAT74_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1.
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BAT74 NXP Semiconductors Schottky barrier double diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BAT74 NXP Semiconductors Schottky barrier double diode Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.
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BAT74 NXP Semiconductors Schottky barrier double diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . .