Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesBAV 19 Case type DO 35 I(F) 0.5 A

BAV19 / BAV20 / BAV21

BAV19 / 20 / 21

High Voltage General Purpose Diode

Sourced from Process 1J.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

Working Inverse Voltage

BAV19

BAV20

BAV21

100

150

200

Average Rectified Current 200 mA

DC Forward Current 500 mA

Recurrent Peak Forward Current 600 mA

f(surge)

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

1.0

4.0

stg

Storage Temperature Range -65 to +200

Operating Junction Temperature 175

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

BAV19 / 20 / 21

Total Device Dissipation

Derate above 25

500

3.33

mW/

Thermal Resistance, Junction to Ambient300

C/W

DO-35

2000 Fairchild Semiconductor International BAV19/20/21, Rev. A

Summary of content (8 pages)

PAGE 1
BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current 100 150 200 200 IF DC Forward Current 500 mA if Recurrent Peak Forward Current 600 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 4.
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(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter BV Breakdown Voltage IR Reverse Current Test Conditions BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 VF Forward Voltage CO Diode Capacitance TRR Reverse Recovery Time IR = 100 µA IR = 100 µA IR = 100 µA VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = 150 V, TA = 150°C VR = 200 V VR = 200 V, TA = 150°C IF = 100 mA IF = 200 mA VR = 0, f = 1.0 MHz Min Max Units 100 100 100 100 100 100 1.0 1.25 5.
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(continued) Typical Characteristics (continued) 725 Ta= 25°C 700 650 600 550 500 450 0.1 FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA VVFF - FORWARD VOLTAGE (mV) VFF - FORWARD VOLTAGE (mV) V FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 Ta= 25°C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 1.3 600 Ta= 25°C 400 Ta= +80°C 500 800 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.
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(continued) Typical Characteristics (continued) POWER DERATING CURVE PD - POWER DISSIPATION (mW) 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode
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DO-35 Tape and Reel Data and Package Dimensions DO-35 Packaging Configuration: Figure 1.0 Soabar Label Corrugated Outer Liner White (Anode) Red/Blue (Cathode) T50R TNR Options Kraft Paper Wound Between Layers DO-35 Packaging Information Table: Figure 2.0 DO-35 Packaging Information Soabar Label sample Packaging Option T50R T50A Packaging type TNR Ammo Standard (no flow code) Bag 10,000 5,000 500 13 - - TYPE IN5225A MARK 52 - REV A2 PART No.
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DO-35 Tape and Ammo Data and Package Dimensions DO-35 Ammo Packing Configuration: Figure 4.0 Soabar Label (on top of box) 254mm x 79mm x 79mm Intermediate Container (5,000 cap) T50A Option DO-35 Taping Dimension: Figure 5.0 H TAPING DIMENSIONS G L1 F B L2 E C A INCH MM MILS NOTES A 2.520 +0.066/ -0.027 64.00 +1.69/ -0.69 2519 +66.5/ -27.0 Overall width B 2.047±0.027 52 ±0.69 2047±27 Inside Tape Spacing C 0.200 ±0.0157 5.08 ±0.40 200 ±15.7 Component Pitch D 0.047(max) 1.
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DO-35 Tape and Reel Data and Package Dimensions, continued DO-35 (FS PKG Code D2) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in millimeters Part Weight per unit (gram): 0.137 March 2000, Rev.
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