Datasheet

BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 9 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
T
amb
= 25 °C
(1) I
B
= −16.0 mA
(2) I
B
= −14.4 mA
(3) I
B
= −12.8 mA
(4) I
B
= −11.2 mA
(5) I
B
= −9.6 mA
(6) I
B
= −8.0 mA
(7) I
B
= −6.4 mA
(8) I
B
= −4.8 mA
(9) I
B
= −3.2 mA
(10) I
B
= −1.6 mA
T
amb
= 25 °C
(1) I
B
= −13.0 mA
(2) I
B
= −11.7 mA
(3) I
B
= −10.4 mA
(4) I
B
= −9.1 mA
(5) I
B
= −7.8 mA
(6) I
B
= −6.5 mA
(7) I
B
= −5.2 mA
(8) I
B
= −3.9 mA
(9) I
B
= −2.6 mA
(10) I
B
= −1.3 mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values
Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
V
CE
(V)
0 −5−4−2 −3−1
006aaa128
−0.4
−0.8
−1.2
I
C
(A)
0
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(1)(3) (2)
V
CE
(V)
0 −5−4−2 −3−1
006aaa129
−0.4
−0.8
−1.2
I
C
(A)
0
(1)(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(2)