DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 12 2002 Feb 04
NXP Semiconductors Product data sheet BC856W; BC857W; BC858W PNP general purpose transistors FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W.
NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − −1 −15 nA − − −4 μA − − −100 nA BC856W 125 − 475 BC857W; BC858W 125 − 800 BC856AW; BC857AW 125 − 250 BC856BW; BC857BW 220 − 475 BC857CW 420 − 800 IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA; − note 1 −250 −600 mV IC = −10 mA; IB = −0.
NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W MGT711 500 MGT712 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 I C (mA) −10−1 BC857AW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857AW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.
NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W MGT715 1000 MGT716 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 I C (mA) −10−1 −1 BC857BW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857BW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.
NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W MGT719 1000 MGT720 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE (1) 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 0 −10−2 −200 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857CW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857CW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.
NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.
NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
