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1. Product proﬁle

1.1 General description

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic

packages. The transistors are fully isolated internally.

1.2 Features

n Current gain matching

n Base-emitter voltage matching

n Drop-in replacement for standard double transistors

1.3 Applications

n Current mirror

n Differential ampliﬁer

1.4 Quick reference data

BCM857BV; BCM857BS;

BCM857DS

PNP/PNP matched double transistors

Rev. 06 — 28 August 2009 Product data sheet

Table 1. Product overview

Type number Package NPN/NPN

complement

Matched version of

NXP JEITA

BCM857BV SOT666 - BCM847BV BC857BV

BCM857BS SOT363 SC-88 BCM847BS BC857BS

BCM857DS SOT457 SC-74 BCM847DS -

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - −45 V

collector current - - −100 mA

DC current gain V

= −5V;

= −2mA

200 290 450

Summary of content (15 pages)

PAGE 1
BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions hFE1/hFE2 hFE matching VCE = −5 V; IC = −2 mA VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA Min Typ Max [1] 0.9 1 - [2] - - 2 Unit Per device [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. mV 2. Pinning information Table 3.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors Table 7. Thermal characteristics …continued Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit Per device Rth(j-a) SOT666 [1][2] - - 416 K/W SOT363 [1] - - 416 K/W SOT457 [1] - - 328 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 175 - MHz NF noise figure VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz - 1.6 - dB VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz - 3.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 006aaa540 −0.20 IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 IC (A) −0.16 −0.12 006aaa541 600 hFE (1) 400 −1.0 (2) −0.75 −0.08 −0.5 200 (3) −0.25 −0.04 0 0 −2 −4 −6 0 −10−2 −8 −10 VCE (V) Tamb = 25 °C −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values 006aaa542 −1.3 VBEsat (V) −1.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 006aaa544 −1 VBE (V) 006aaa545 103 fT (MHz) −0.8 102 −0.6 −0.4 −10−1 −1 −10 −102 10 −103 −1 IC (mA) VCE = −5 V; Tamb = 25 °C Fig 5. −102 −10 IC (mA) VCE = −5 V; Tamb = 25 °C Base-emitter voltage as a function of collector current; typical values Fig 6.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 8. Application information V− VCC OUT2 OUT1 IN1 R1 TR1 IN2 TR2 l out TR1 TR2 V+ 006aaa524 Fig 9. 006aaa526 Current mirror Fig 10. Differential amplifier 9. Package outline 1.7 1.5 6 2.2 1.8 0.6 0.5 5 6 4 1.1 0.8 5 4 2 3 0.45 0.15 0.3 0.1 1.7 1.5 2.2 1.35 2.0 1.15 1.3 1.1 pin 1 index pin 1 index 1 2 1 3 0.18 0.08 0.27 0.17 0.5 1.3 1 Dimensions in mm 0.25 0.10 0.3 0.2 0.65 04-11-08 Fig 11.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) placement area 0.55 (2×) solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint SOT666 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 16. Wave soldering footprint SOT363 (SC-88) 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 17.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 18. Wave soldering footprint SOT457 (SC-74) BCM857BV_BS_DS_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCM857BV_BS_DS_6 20090828 Product data sheet - BCM857BV_BS_DS_5 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .