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1. Product profile

1.1 General description

PNP general-purpose double transistors in a small SOT143B Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits

 Low current (max. 100 mA)

 Low voltage (max. 30 V)

 Matched pairs

 AEC-Q101 qualified

 Small SMD plastic package

1.3 Applications

 Applications with working point independent of temperature

 Current mirrors

1.4 Quick reference data

BCV62

PNP general-purpose double transistors

Rev. 4 — 26 July 2010 Product data sheet

Table 1. Product overview

Type number Package NPN complement

NXP JEITA

BCV62 SOT143B - BCV61

BCV62A BCV61A

BCV62B BCV61B

BCV62C BCV61C

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - −30 V

collector current - - −100 mA

Transistor TR1

DC current gain V

= −5V; I

= −100 μA 100 - -

= −5V; I

= −2 mA 100 - 800

Summary of content (14 pages)

PAGE 1
BCV62 PNP general-purpose double transistors Rev. 4 — 26 July 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV62 Package NPN complement NXP JEITA SOT143B - BCV61 BCV62A BCV61A BCV62B BCV61B BCV62C BCV61C 1.2 Features and benefits Low current (max. 100 mA) Low voltage (max.
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BCV62 NXP Semiconductors PNP general-purpose double transistors Table 2. Symbol Quick reference data …continued Parameter Conditions Min Typ Max BCV62 100 - 800 BCV62A 100 - 250 BCV62B 220 - 475 BCV62C 420 - 800 Unit Transistor TR2 VCE = −5 V; IC = −2 mA DC current gain hFE 2. Pinning information Table 3.
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BCV62 NXP Semiconductors PNP general-purpose double transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BCV62 NXP Semiconductors PNP general-purpose double transistors Table 8. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol VBEsat Parameter Conditions base-emitter saturation voltage base-emitter voltage VBE Min Typ Max Unit IC = −10 mA; IB = −0.
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BCV62 NXP Semiconductors PNP general-purpose double transistors mgt711 500 mgt712 −1200 VBE (mV) −1000 hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 IC (mA) VCE = −5 V −10−1 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = 150 °C BCV62A: DC current gain as a function of collector current; typical values mgt713 −104 Fig 2.
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BCV62 NXP Semiconductors PNP general-purpose double transistors mgt715 1000 mgt716 −1200 VBE (mV) −1000 hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 IC (mA) VCE = −5 V −10−1 −1 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 5.
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BCV62 NXP Semiconductors PNP general-purpose double transistors mgt719 1000 mgt720 −1200 VBE (mV) −1000 hFE (1) 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 −200 0 −10−2 −10−1 −1 −10 −102 −103 IC (mA) 0 −10−1 VCE = −5 V −1 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 9. −10 BCV62C: DC current gain as a function of collector current; typical values mgt721 −104 Fig 10.
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BCV62 NXP Semiconductors PNP general-purpose double transistors −30 mbk083 −VCE1max (V) IE2 = 1 mA −20 5 mA 10 mA −10 50 mA 0 10−1 1 10 102 RE (Ω) IC1/IE2 = 1.3 Fig 13. Maximum collector-emitter voltage as a function of emitter resistor (see Figure 15) 8. Test information A IC1 −VCE1 2 TR1 1 TR2 3 IE2 = constant 4 006aaa841 Fig 14. Test circuit current matching A IC1 −VCE1 2 TR1 3 RE 1 TR2 IE2 = constant 4 RE 006aac001 Fig 15.
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BCV62 NXP Semiconductors PNP general-purpose double transistors 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm 04-11-16 Fig 16. Package outline SOT143B 10.
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BCV62 NXP Semiconductors PNP general-purpose double transistors 11. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 solder paste 3 occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 sot143b_fr Fig 17. Reflow soldering footprint SOT143B 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 sot143b_fw Fig 18.
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BCV62 NXP Semiconductors PNP general-purpose double transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCV62 v.4 20100726 Product data sheet - BCV62_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate.
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BCV62 NXP Semiconductors PNP general-purpose double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BCV62 NXP Semiconductors PNP general-purpose double transistors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.
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BCV62 NXP Semiconductors PNP general-purpose double transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . .