Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBF1108,215, MOSFET

1. Product proﬁle

1.1 General description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a

band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The

low loss and high isolation capabilities of these devices provide excellent RF switching

functions. The gate of the MOSFET can be isolated from ground with the diode, resulting

in low losses. Integrated diodes between gate and source and between gate and drain

protect against excessive input voltage surges.

1.2 Features

n Specially designed for low loss RF switching up to 1 GHz

1.3 Applications

n Various RF switching applications such as:

u Passive loop through for VCR tuner

u Transceiver switching

1.4 Quick reference data

[1] I

= diode forward current.

BF1108; BF1108R

Silicon RF switches

Rev. 04 — 29 May 2008 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

ins(on)

on-state insertion loss R

=50Ω;f≤ 1 GHz;

=0V; I

=0mA

[1]

--2dB

ISL

off

off-state isolation R

=50Ω; f ≤ 1 GHz;

=5V; I

=1mA

30--dB

DSon

drain-source on-state

resistance

=0V; I

= 1 mA - 12 20 Ω

GS(p)

gate-source pinch-off

voltage

=1V; I

=20µA-−3 −4V

Summary of content (10 pages)

PAGE 1
BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses.
PAGE 2
BF1108; BF1108R NXP Semiconductors Silicon RF switches 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BF1108 (SOT143B) 1 FET gate; diode anode 2 diode cathode 3 source [1] 4 drain [1] 4 1 3 4 2 1 3 2 001aai042 BF1108R (SOT143R) 1 FET gate; diode anode 2 diode cathode 3 source [1] 4 drain [1] 3 2 3 4 2 1 4 1 001aai043 [1] Drain and source are interchangeable. 3. Ordering information Table 3.
PAGE 3
BF1108; BF1108R NXP Semiconductors Silicon RF switches 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
BF1108; BF1108R NXP Semiconductors Silicon RF switches 8. Dynamic characteristics Table 8. Dynamic characteristics Common cathode; Tamb = 25 °C. Symbol Parameter Conditions Min Typ Max Unit RS = RL = 50 Ω; f ≤ 1 GHz - - 2 dB RS = RL = 50 Ω; f = 1 GHz - 1.3 - dB RS = RL = 75 Ω; f ≤ 1 GHz - - 3 dB RS = RL = 50 Ω; f ≤ 1 GHz 30 - - dB RS = RL = 50 Ω; f = 1 GHz - 38 - dB RS = RL = 75 Ω; f ≤ 1 GHz 30 - - dB - 12 20 Ω - 1 - pF - 0.65 0.
PAGE 5
BF1108; BF1108R NXP Semiconductors Silicon RF switches mgs357 0 mgs358 0 Lins(on) ISLoff −1 −20 −2 −40 −3 −4 0 400 800 f (MHz) −60 1200 0 400 800 f (MHz) 1200 VSK = VDK = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode forward current). VSK = VDK = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode forward current). Measured in test circuit see Figure 3. Measured in test circuit see Figure 3. Fig 1. On-state insertion loss as a function of frequency; typical values Fig 2.
PAGE 6
BF1108; BF1108R NXP Semiconductors Silicon RF switches 9. Package outline Plastic surface-mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 1.1 0.9 OUTLINE VERSION A1 max bp b1 c D E 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 e 1.9 e1 HE Lp Q v w y 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.
PAGE 7
BF1108; BF1108R NXP Semiconductors Silicon RF switches Plastic surface-mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC SOT143R Fig 5.
PAGE 8
BF1108; BF1108R NXP Semiconductors Silicon RF switches 10. Abbreviations Table 9. Abbreviations Acronym Description AQL Acceptable Quality Level MOSFET Metal-Oxide Semiconductor Field-Effect Transistor RF Radio Frequency S4 Special inspection level 4 VCR VideoCassette Recorder 11. Revision history Table 10.
PAGE 9
BF1108; BF1108R NXP Semiconductors Silicon RF switches 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 10
BF1108; BF1108R NXP Semiconductors Silicon RF switches 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . .