Datasheet

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 5 of 10
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
V
SK
= V
DK
= 0 V; R
S
= R
L
= 50 Ω; I
F
= 0 mA (diode
forward current).
Measured in test circuit see Figure 3.
V
SK
= V
DK
= 5 V; R
S
= R
L
= 50 Ω; I
F
= 1 mA (diode
forward current).
Measured in test circuit see Figure 3.
Fig 1. On-state insertion loss as a function of
frequency; typical values
Fig 2. Off-state isolation as a function of frequency;
typical values
On-state: V = 0 V.
Off-state: V = 5 V.
Fig 3. Test circuit
0 400 1200
0
−1
−3
−4
−2
800
mgs357
f (MHz)
L
ins(on)
0 400 1200
0
−40
−60
−20
800
mgs358
f (MHz)
ISL
off
mbl028
1 nF
1 nF
V
V
1 nF
1 nF
50 Ω
input
50 Ω
output
4.7 kΩ
47 kΩ
BF1108/BF1108R
100 kΩ
100 kΩ