Datasheet

1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
1.2 Features and benefits
 Low leakage level (typ. 500 fA)
 High gain
 Low cut-off voltage (max. 2.2 V for BF545A).
1.3 Applications
 Impedance converters in e.g. electret microphones and infra-red detectors
 VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors
Rev. 4 — 15 September 2011 Product data sheet
SOT23
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - 30 V
V
GSoff
gate-source cut-off
voltage
I
D
=1A; V
DS
=15V 0.4 - 7.8 V
I
DSS
drain current V
GS
=0V; V
DS
=15V
BF545A 2 - 6.5 mA
BF545B 6 - 15 mA
BF545C 12 - 25 mA
P
tot
total power dissipation T
amb
 25 C--250mW
y
fs
 forward transfer
admittance
V
GS
=0V; V
DS
=15V 3 - 6.5 mS