Datasheet

BF545A_BF545B_BF545C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 15 September 2011 10 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
V
DS
= 0 V; V
GS
= 20 V. V
DS
= 15 V; T
j
= 25 C.
Fig 16. Gate current as a function of junction
temperature; typical values.
Fig 17. Reverse transfer capacitance as a function of
gate-source voltage; typical values.
V
DS
= 15 V; T
j
= 25 C. V
DS
= 10 V; I
D
= 1 mA; T
amb
= 25 C.
(1) b
is
.
(2) g
is
.
Fig 18. Typical input capacitance. Fig 19. Common-source input admittance; typical
values.
mbb453
−1
−10
−10
2
−10
3
I
GSS
(pA)
10
−1
T
j
(°C)
−50 150100050
V
GS
(V)
−10 0−2−6 −4−8
mbb452
0.4
0.6
0.2
0.8
1
C
rss
(pF)
0
V
GS
(V)
−10 0−2−6 −4−8
mbb451
1
2
3
C
iss
(pF)
0
mbb468
f (MHz)
10 10
3
10
2
10
−1
1
10
10
2
y
is
(mS)
10
−2
(1)
(2)