Datasheet

BF545A_BF545B_BF545C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 15 September 2011 4 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
7. Static characteristics
Table 7. Static characteristics
T
j
= 25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)GSS
gate-source breakdown voltage I
G
= 1 A; V
DS
=0V 30--V
V
GSoff
gate-source cut-off voltage I
D
= 200 A; V
DS
=15V
BF545A 0.4 - 2.2 V
BF545B 1.6 - 3.8 V
BF545C 3.2 - 7.8 V
I
D
=1A; V
DS
=15V 0.4 - 7.5 V
I
DSS
drain current V
GS
=0V; V
DS
=15V
BF545A 2 - 6.5 mA
BF545B 6 - 15 mA
BF545C 12 - 25 mA
I
GSS
gate-source leakage current V
GS
= 20 V; V
DS
=0V - 0.5 1000 pA
V
GS
= 20 V; V
DS
=0V;
T
j
=125C
--100 nA
y
fs
 forward transfer admittance V
GS
=0V; V
DS
=15V 3 - 6.5 mS
y
os
 common source output
admittance
V
GS
=0V; V
DS
=15V - 40 - S