Datasheet

BF545A_BF545B_BF545C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 15 September 2011 6 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
V
DS
= 15 V; V
GS
= 0 V; T
j
= 25 C. V
DS
= 100 mV; V
GS
= 0 V; T
j
= 25 C.
Fig 4. Common-source output admittance as a
function of gate-source cut-off voltage; typical
values.
Fig 5. Drain-source on-resistance as a function of
gate-source cut-off voltage; typical values.
BF545A
T
j
= 25 C.
(1) V
GS
= 0 V.
(2) V
GS
= 0.5 V.
(3) V
GS
= 1.0 V.
BF545A
V
DS
= 15 V; T
j
= 25 C.
Fig 6. Typical output characteristics. Fig 7. Typical input characteristics.
V
GSoff
(V)
0 −8−6−2 −4
mbb465
40
20
60
80
Y
os
(μS)
0
V
GSoff
(V)
0 −8−6−2 −4
mbb464
100
200
300
R
DSon
(Ω)
0
V
DS
(V)
0161248
mbb462
2
4
6
I
D
(mA)
0
(1)
(2)
(3)
V
GS
(V)
−30−1−2
mbb463
2
4
6
I
D
(mA)
0