Datasheet

BF545A_BF545B_BF545C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 15 September 2011 9 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
BF545A
V
DS
= 15 V; T
j
= 25 C.
BF545B
V
DS
= 15 V; T
j
= 25 C.
Fig 12. Drain current as a function of gate-source
voltage; typical values.
Fig 13. Drain current as a function of gate-source
voltage; typical values.
BF545C
V
DS
= 15 V; T
j
= 25 C.
I
D
= 10 mA only for BF545B and BF545C; T
j
= 25 C.
(1) I
D
= 10 mA.
(2) I
D
= 1 mA.
(3) I
D
= 0.1 mA.
(4) I
GSS
.
Fig 14. Drain current as a function of gate-source
voltage; typical values.
Fig 15. Gate current as a function of drain-gate
voltage; typical values.
mbb461
V
GS
(V)
−30−1−2
1
10
−2
10
−1
10
2
10
10
3
I
D
(μA)
10
−3
mbb458
V
GS
(V)
−60−2−4
1
10
−2
10
−1
10
2
10
10
3
I
D
(μA)
10
−3
mbb455
1
10
−2
10
−1
10
2
10
10
3
I
D
(μA)
10
−3
V
GS
(V)
−80−2−6 −4
mbb454
−10
−1
−1
−10
−10
2
I
G
(pA)
−10
−2
V
DG
(V)
020168124
(3)
(4)
(2)
(1)