Datasheet

NXP Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
Fig.4 Transfer characteristics; typical values.
V
DS
= 8 V; T
j
=25°C.
handbook, halfpage
−0.6 −0.4 0 0.2−0.2 0.4
V
G1-S
(V)
3 V
2 V
1.5 V
0.5 V
0 V
0.6
40
30
10
0
20
MRC281
V
G2-S
= 4 V
1 V
I
D

(mA)
Fig.5 Output characteristics; typical values.
V
G2-S
= 4 V; T
j
=25°C.
handbook, halfpage
048 16
30
10
0
20
MRC282
12
V
DS
(V)
I
D

(mA)
0.2 V
0.1 V
0 V
−0.3 V
−0.2 V
−0.1 V
V
G1-S
= 0.3 V
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
V
DS
= 8 V; T
j
=25°C.
0
10
20
30
40
50
0 5 10 15 20 25
0.5 V
1 V
1.5 V
2 V
3 V
4 V
V
G2-S
= 0 V
Y
fs
(mS)
I
D
(mA)
MRC280
Fig.7 Forward transfer admittance as a function
of junction temperature; typical values.
0
20
40
60
0 40 80 120 16040
Y
fs
(mS)
T
j
( C)
o
MRC276
V
DS
= 8 V; V
G2-S
= 4 V; I
D
=15mA.
Rev. 03 - 14 November 2007
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