Datasheet

NXP Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
Table 1 Scattering parameters
Table 2 Noise data
f
(MHz)
s
11
s
21
s
12
s
22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
V
DS
=8V; V
G2-S
=4V; I
D
= 10 mA; T
amb
=25°C.
50 0.998 −5.1 3.537 173.5 0.001 98.2 0.996 −2.4
100 0.994 −10.4 3.502 167.7 0.001 88.8 0.994 −4.9
200 0.979 −20.8 3.450 154.9 0.003 74.6 0.987 −9.5
300 0.962 −30.3 3.318 143.7 0.004 69.5 0.983 −13.9
400 0.939 −40.1 3.234 131.9 0.005 65.6 0.980 −18.5
500 0.914 −49.1 3.093 120.7 0.006 64.4 0.974 −22.8
600 0.892 −57.1 2.912 111.1 0.005 63.1 0.969 −27.0
700 0.865 −64.4 2.774 101.0 0.005 65.2 0.966 −31.2
800 0.837 −71.6 2.616 91.4 0.004 70.8 0.965 −35.4
900 0.811 −78.1 2.479 81.9 0.004 87.4 0.965 −39.4
1000 0.785 −84.5 3.329 72.5 0.003 108.0 0.966 −43.7
V
DS
=8V; V
G2-S
=4V; I
D
= 15 mA; T
amb
=25°C.
50 0.998 −5.3 3.983 173.4 0.001 95.5 0.994 −2.4
100 0.994 −10.9 3.943 167.5 0.001 93.6 0.991 −5.0
200 0.976 −21.6 3.878 154.7 0.003 74.3 0.984 −9.7
300 0.957 −31.7 3.722 143.3 0.004 70.0 0.979 −14.2
400 0.934 −41.7 3.614 131.6 0.005 63.5 0.975 −18.8
500 0.907 −51.1 3.446 120.4 0.006 62.2 0.969 −23.2
600 0.885 −59.1 3.240 110.9 0.005 59.6 0.964 −27.4
700 0.851 −66.8 3.072 100.9 0.005 64.8 0.961 −31.6
800 0.826 −73.9 2.891 91.3 0.004 67.8 0.959 −35.9
900 0.797 −80.7 2.733 81.9 0.004 85.0 0.958 −40.0
1000 0.773 −87.0 2.569 72.8 0.004 102.9 0.958 −44.2
f
(MHz)
F
min
(dB)
Γ
opt
r
n
(ratio) (deg)
V
DS
=8V; V
G2-S
=4V; I
D
= 10 mA; T
amb
=25°C.
800 1.50 0.720 56.7 0.580
V
DS
=8V; V
G2-S
=4V; I
D
= 15 mA; T
amb
=25°C.
800 1.50 0.700 59.2 0.520
Rev. 03 - 14 November 2007
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