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1. Product profile

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a

plastic, 4-pin dual-emitter SOT343F package.

1.2 Features and benefits

 Low noise high linearity RF transistor

 High maximum output third-order intercept point 32 dBm at 1.8 GHz

 110 GHz f

silicon germanium technology

1.3 Applications

 Ka band oscillators DRO’s

 High linearity applications

 Medium output power applications

 Wi-Fi / WLAN / WiMAX

 GPS

 ZigBee

 SDARS first stage LNA

 LTE, cellular, UMTS

BFU760F

NPN wideband silicon germanium RF transistor

Rev. 1 — 29 April 2011 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Summary of content (12 pages)

PAGE 1
BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 2.8 V VEBO emitter-base voltage open collector - - 1.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking Type number Marking Description BFU760F D7* * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 2.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 μA; IE = 0 mA 10 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 2.8 - - V - 25 70 mA - 100 nA IC collector current ICBO collector-base cut-off current IE = 0 mA; VCB = 4.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions IP3 third-order intercept point IC = 30 mA; VCE = 2.5 V; ZS = ZL = 50 Ω; Tamb = 25 °C [1] Min Typ Max Unit f = 1.5 GHz - 32 - dBm f = 1.8 GHz - 32 - dBm f = 2.4 GHz - 32 - dBm f = 5.8 GHz - 33 - dBm Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 001aam865 250 001aam866 50 CCBS (fF) fT (GHz) 200 40 150 30 100 20 50 10 0 0 0 1 2 3 4 0 20 40 60 VCB (V) f = 1 MHz, Tamb = 25 °C. Fig 4. 80 IC (mA) VCE = 1 V; f = 2 GHz; Tamb = 25 °C. Collector-base capacitance as a function of collector-base voltage; typical values Fig 5.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 001aam868 40 001aam869 40 G (dB) G (dB) 30 30 MSG MSG 20 20 Gp(max) Gp(max) IS21I2 IS21I2 10 10 0 0 0 2 4 6 8 10 0 2 4 6 8 f (GHz) VCE = 1 V; IC = 8 mA; Tamb = 25 °C. Fig 7. VCE = 1 V; IC = 50 mA; Tamb = 25 °C. Gain as a function of frequency; typical values 001aam870 1.2 Fig 8. Gain as a function of frequency; typical values 001aam871 1.0 NFmin (dB) (1) NFmin (dB) 10 f (GHz) 0.8 0.8 0.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.48 0.38 0.2 0.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 11
BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements.
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BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . .