Datasheet

BGA7124 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 9 September 2010 23 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
(1) T
case
= −40 °C.
(2) T
case
= 25 °C.
(3) T
case
= 85 °C.
(1) T
case
= −40 °C.
(2) T
case
= 25 °C.
(3) T
case
= 85 °C.
Fig 30. Output power at 1 dB gain compression as a
function of frequency
Fig 31. Power gain as a function of frequency
f (GHz)
0.92 0.960.950.93 0.94
014aab076
24
26
22
28
30
P
L(1dB)
(dBm)
20
(1)
(2)
(3)
f (GHz)
0.92 0.960.950.93 0.94
014aab077
22
24
20
26
28
G
p
(dB)
18
(1)
(2)
(3)
T
case
= 25 °C. (1) T
case
= −40 °C.
(2) T
case
= 25 °C.
(3) T
case
= 85 °C.
Fig 32. Input return loss, output return loss and
isolation as a function of frequency
Fig 33. Output third-order intercept point as a function
of frequency
RL
out
RL
in
ISL
f (GHz)
0.92 0.960.950.93 0.94
014aab078
−20
−10
0
RL
in
, RL
out
, ISL
(dB)
−30
f (GHz)
0.92 0.960.950.93 0.94
014aab079
36
38
40
IP3
O
(dBm)
34
(1)
(3)
(2)