Datasheet

1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features
n Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,
a supply voltage of 28 V and an I
Dq
of 900 mA:
u Average output power = 25 W
u Power gain = 19 dB
u Efficiency = 32 %
u IMD3 = −34 dBc
u ACPR = −38 dBc
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (1800 MHz to 2000 MHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
Rev. 03 — 13 January 2009 Product data sheet
Table 1. Typical performance
RF performance at T
case
= 25 ° C in a common source class-AB production test circuit.
Mode of operation f V
DS
P
L(AV)
G
p
η
D
IMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA 1930 to 1990 28 25 19 32 −34
[1]
−38
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.