Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF6G38LS-100,112, MOSFET

1. Product profile

1.1 General description

10 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3600 MHz.

[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.

[2] Measured within 30 kHz bandwidth.

1.2 Features and benefits

 Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on

CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and

an I

of 130 mA:

 Qualified

up to a maximum V

operation of 32 V

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 Internally mat

ched for ease of use

 Low gold plating thickness on leads

 Compliant to Directive 2002/95

/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF6G38-10; BLF6G38-10G

WiMAX power LDMOS transistor

Rev. 2 — 6 January 2015 Product data sheet

Table 1. Typical performance

RF performance at T

case

= 25



C in a class-AB production test circuit.

Mode of operation f V

L(AV)



ACPR

885k

ACPR

1980k

(MHz) (V) (W) (dB) (%) (dBc) (dBc)

1-carrier N-CDMA

[1]

3400 to 3600 28 2 14 20 49

[2]

64

[2]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling. You must use a ground strap or touch the PC case or other

grounded source before unpacking or handling the hardware.

Summary of content (16 pages)

PAGE 1
BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 2 — 6 January 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit.
PAGE 2
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 3400 MHz to 3600 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G38-10 (SOT975B) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 2 BLF6G38-10G (SOT975C) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 2 [1] Connected to flange. 3.
PAGE 3
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 3.1 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5.
PAGE 4
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 130 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production circuit.
PAGE 5
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 7.2.2 Graphs 001aaj362 12 001aaj363 20 50 ηD (%) Gp (dB) EVM (%) 40 18 Gp 8 16 30 14 20 4 12 0 10−1 1 10 10−1 10 10 ηD 0 1 10 PL (W) PL(AV) (W) VDS = 28 V; IDq = 130 mA; f = 3500 MHz. Fig 1. VDS = 28 V; IDq = 130 mA; f = 3500 MHz. EVM as a function of load power; typical values Fig 2.
PAGE 6
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 7.3 Single carrier NA IS-95 broadband performance at 2 W average 7.3.1 Graphs 001aaj365 20 23 ηD (%) Gp (dB) 22 18 001aaj366 −40 ACPR (dBc) (2) (1) ACPR885k −50 21 16 ACPR1500k Gp 14 (1) (2) 20 ηD −60 (2) (1) ACPR1980k 19 12 10 3400 3450 3500 18 3600 3550 −70 3400 3440 3480 3520 3560 3600 f (MHz) f (MHz) VDS = 28 V; IDq = 130 mA; Single Carrier IS-95; PAR = 9.7 dB at 0.01 % probability.
PAGE 7
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 001aaj369 20 Gp (dB) 001aaj370 0.20 Pi (W) 18 (3) 0.16 (1) (2) 16 (1) 0.12 (2) 14 0.08 (3) 12 0.04 10 10−1 1 0 10−1 10 PL (W) VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz.
PAGE 8
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 8. Test information C2 C5 L1 C4 C7 R2 C3 R1 C1 C6 BLF6G38-10 BLF6G38-10 Input Rev 2 NXP Output Rev 3 NXP PCB2 PCB1 001aaj371 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10.
PAGE 9
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor C2 C5 L1 C4 C7 R2 C3 R1 C1 C6 BLF6G38-10G BLF6G38-10G Input Rev 1 NXP Output Rev 1 NXP PCB2 PCB1 001aaj372 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 11. Component layout for 3400 MHz to 3600 MHz test circuit BLF6G38-10G Table 9. List of components For test circuit, see Figure 10 and Figure 11.
PAGE 10
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor Table 10. Measured test circuit impedances f Zi Zo (GHz) () () 3.40 12.61 - j23.96 5.21 - j6.31 3.45 14.16 - j22.23 5.47 - j6.01 3.50 16.00 - j21.74 5.72 - j5.87 3.55 17.43 - j22.91 5.90 - j5.91 3.60 17.11 - j25.43 5.92 - j6.09 3.40 19.33 - j22.54 4.71 - j7.09 3.45 21.20 - j21.65 4.75 - j6.82 3.50 23.02 - j22.41 4.72 - j6.65 3.55 23.70 - j24.95 4.60 - j6.55 3.60 21.98 - j28.26 4.36 - j6.
PAGE 11
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Earless flanged ceramic package; 2 leads SOT975B D A F U1 D1 A H1 c 1 E1 H U2 E 2 w1 b Q A 0 5 mm scale Dimensions (mm dimensions are derived from the original inch dimensions) Unit mm A max 3.15 nom min 2.59 b c D D1 E E1 3.38 0.23 6.55 6.93 6.55 6.93 3.23 0.18 6.40 6.78 6.40 6.78 F H H1 Q U1 U2 0.23 11.05 7.49 0.76 6.43 6.43 0.18 10.80 6.73 0.66 6.27 6.27 w1 0.
PAGE 12
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor Earless flanged ceramic package; 2 leads SOT975C Z4 Z6 Z3 Z5 D A Z1 F U1 D1 A H1 Z2 minimal dimensions for solder pattern c 1 L Lp E1 H U2 E 0 5 mm scale Z4 Z5 Z6 3.30 1.14 1.52 α 7° 2 w1 b 0° α A 7° 0.130 0.045 0.060 Q 0° Dimensions (mm dimensions are derived from the original inch dimensions) Unit mm A max 3.15 nom min 2.59 b c D D1 E E1 3.38 0.23 6.55 6.93 6.55 6.93 F H H1 L 0.
PAGE 13
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 11.
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BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 15
BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
PAGE 16
NXP Semiconductors BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . .