Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBSS84,215, MOSFET

1. Product proﬁle

1.1 General description

P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS)

transistor in a small Surface-Mounted Device (SMD) plastic package.

[1] /DG: halogen-free

1.2 Features

1.3 Applications

1.4 Quick reference data

BSS84

P-channel enhancement mode vertical DMOS transistor

Rev. 06 — 16 December 2008 Product data sheet

Table 1. Product overview

Type number

[1]

Package

NXP JEDEC

BSS84 SOT23 TO-236AB

BSS84/DG

n Low threshold voltage n Direct interface to CMOS and

Transistor-Transistor Logic (TTL)

n High-speed switching n No secondary breakdown

n Line current interrupter in telephone sets n Relay, high-speed and line transformer

drivers

n V

≤−50 V n I

≤−130 mA

n R

DSon

≤ 10 Ω n P

tot

≤ 250 mW

Summary of content (11 pages)

PAGE 1
BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] BSS84 Package NXP JEDEC SOT23 TO-236AB BSS84/DG [1] /DG: halogen-free 1.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 1 D 2 G SOT23 (TO-236AB) S 001aaa025 3. Ordering information Table 3. Ordering information Type number[1] Package Name BSS84 Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 BSS84/DG [1] /DG: halogen-free 4. Marking Table 4.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor mld199 300 Ptot (mW) 200 100 0 0 Fig 2. 50 100 150 200 Tamb (°C) Power derating curve 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient see Figure 3 [1] [1] Min Typ Max Unit - - 500 K/W Mounted on a PCB, vertical in still air. mld250 103 Rth(j-a) (K/W) δ = 0.75 0.5 102 0.2 0.1 0.05 0.02 10 0.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit −50 - - V Tj = 25 °C −0.8 - −2 V Tj = −55 °C - - −1.
PAGE 6
BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor mld197 −600 VGS = −10 V −7.5 V ID −6 V mld198 60 VGS = −2.5 V −3 V −4 V −5 V RDSon (Ω) (mA) −400 40 −5 V −4 V −200 20 −7.5 V −3 V −2.5 V 0 0 −2 −4 −6 −8 −10 V 0 −1 −10 −12 VDS (V) Tj = 25 °C Fig 4. −10 −102 ID (mA) −103 Tj = 25 °C Output characteristics: drain current as a function of drain-source voltage; typical values Fig 5.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor mld195 1.2 mld191 80 C (pF) VGSth VGSth(25°C) 60 1.0 40 Ciss 0.8 20 Coss Crss 0 0.6 −50 0 50 100 0 150 ID = −1 mA; VDS = VGS Fig 8. −10 −20 Tj (°C) VDS (V) −30 VGS = 0 V; f = 1 MHz Gate-source threshold voltage as a function of junction temperature Fig 9. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 8.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 10. Revision history Table 8.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .