Datasheet

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BST82

N-channel enhancement mode ﬁeld-effect transistor

Rev. 03 — 26 July 2000 Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™

technology.

Product availability:

BST82 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

■ High speed line driver

■ Logic level translator.

4. Pinning information

1. TrenchMOS is a trademark of Royal Philips Electronics.

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT23 N-channel MOSFET

2 source (s)

3 drain (d)

03ab44

03ab30

Summary of content (13 pages)

PAGE 1
BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BST82 in SOT23. 2. Features ■ ■ ■ ■ TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications c c ■ Relay driver ■ High speed line driver ■ Logic level translator. 4.
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BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit Tj = 25 to 150 °C − 100 V VDS drain-source voltage (DC) ID drain current (DC) Tsp = 25 °C; VGS = 5 V − 190 mA Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance 5 10 Ω Conditions Min Max Unit VGS = 5 V; ID = 150 mA 6.
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BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa17 03aa25 120 120 der (%) 100 Ider (%) 100 80 80 60 60 40 40 20 20 P 0 0 0 25 50 75 100 125 Tsp 150 (oC) 0 175 25 50 75 100 125 150 175 Tsp (oC) VGS ≥ 5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2.
PAGE 4
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 350 K/W 7.1 Transient thermal impedance 03aa57 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.
PAGE 5
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 100 130 − V Tj = −55 °C 89 − − V Tj = 25 °C 1 2 − V Tj = 150 °C 0.6 − − V Tj = −55 °C − − 3.5 V Tj = 25 °C − 0.01 1.
PAGE 6
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa63 0.5 ID (A) 0.45 03aa65 0.7 Tj = 25oC ID (A) VGS = 10V 5V 0.4 VDS > ID X RDSon 0.6 0.5 0.35 0.3 0.25 Tj = 25oC 0.4 4V 150oC 0.3 0.2 3.5 V 0.15 0.2 0.1 0.1 3V 0.05 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 6 7 8 VGS (V) VDS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5.
PAGE 7
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa34 3 03aa37 10-1 I D VGS(th) (A) 10-2 (V) 2.5 typ 2 min 10-3 typ 1.5 10-4 min 1 10-5 0.5 10-6 0 -60 -20 20 60 100 140 180 Tj (oC) 0 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03aa66 0.5 gfs 0.
PAGE 8
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa67 1 IS (A) 0.9 VGS = 0 V 0.8 0.7 0.6 150oC 0.5 0.4 Tj = 25oC 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07223 Product specification Rev.
PAGE 9
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
PAGE 10
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 03 20000726 CPCN Description HZG303 Product specification; third version; supersedes BST82_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 02 19970623 - Product specification; second version. 01 19901031 - Product specification; initial version. © Philips Electronics N.V. 2000. All rights reserved.
PAGE 11
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
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BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax.
PAGE 13
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . .