Datasheet

Philips Semiconductors Product specification
Triacs BT137 series E
sensitive gate
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤ 102˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0246810
0
2
4
6
8
10
12
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
121
117
113
109
105
101
1
-50 0 50 100 150
0
2
4
6
8
10
BT137
102 C
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T2- G+ quadrant
dI /dt limit
T
0.01 0.1 1 10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1 10 100 1000
0
Number of cycles at 50Hz
ITSM / A
1
10
20
30
40
50
60
70
80
T
I
TSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
June 2001 3 Rev 1.400